H 2 O Induced Hump Phenomenon...

IEEE Transactions on Device and Materials Reliability 2016 / 3 Vol. 16; Iss. 1

H 2 O Induced Hump Phenomenon in Capacitance–Voltage Measurements of a-IGZO Thin-Film Transistors

Han, Yanbing, Cui, Can, Yang, Jianwen, Tsai, Ming-Yen, Chang, Ting-Chang, Zhang, Qun
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Volume:
16
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/tdmr.2015.2502989
Date:
March, 2016
File:
PDF, 835 KB
english, 2016
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