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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A physics-based compact model for Fully-Depleted Tunnel Field Effect Transistor
Martinie, S., Rozeau, O., Le Royer, C., Lacord, J., Jaud, M-A., Poiroux, T., Le Carval, G., Barbe, J-C.Year:
2015
Language:
english
DOI:
10.1109/sispad.2015.7292322
File:
PDF, 646 KB
english, 2015