High speed switching in quantum Dot/Ti-TiOx nonvolatile...

Electronic Materials Letters 2016 / 3 Vol. 12; Iss. 2

High speed switching in quantum Dot/Ti-TiOx nonvolatile memory device

Kannan, V., Kim, Hyun-Seok, Park, Hyun-Chang
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Volume:
12
Language:
english
Journal:
Electronic Materials Letters
DOI:
10.1007/s13391-015-5410-5
Date:
March, 2016
File:
PDF, 1.97 MB
english, 2016
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