Simulation Study of An Insulated Gate Bipolar Transistor...

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IEEE Journal of the Electron Devices Society 2016

Simulation Study of An Insulated Gate Bipolar Transistor with Pinched-off N-type Pillar

Jiang, Mengxuan, Shen, Z. John, Wang, Jun, Shuai, Zhikang, Yin, Xin
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Year:
2016
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2016.2537828
File:
PDF, 623 KB
english, 2016
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