Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

Hetero-epitaxy of ε-Ga2O3 layers by MOCVD and ALD

Boschi, F., Bosi, M., Berzina, T., Buffagni, E., Ferrari, C., Fornari, R.
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Volume:
443
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.03.013
Date:
June, 2016
File:
PDF, 4.74 MB
2016
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