Analysis of Oxide Trap Characteristics by Random Telegraph...

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IEEE Electron Device Letters 2016

Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs with HfO2-Based Gate Dielectrics

Chen, Ching-En, Chang, Ting-Chang, You, Bo, Tsai, Jyun-Yu, Lo, Wen-Hung, Ho, Szu-Han, Liu, Kuan-Ju, Lu, Ying-Hsin, Liu, Xi-Wen, Hung, Yu-Ju, Tseng, Tseung-Yuen, Cheng, Osbert, Huang, Cheng-Tung, Lu, C
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Year:
2016
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2535900
File:
PDF, 868 KB
2016
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