Characterization of Nb doped Bi 4...

Ferroelectrics 2001 / 01 Vol. 260; Iss. 1

Characterization of Nb doped Bi 4 Ti 3 O 12 thin films prepared by the sol-gel ethod

Kim, Tae Gyoung, Lee, Sang Hern, Joo, Heung Jin, Kim, Jong Pil, Ryu, Min Ki, Kim, Do Han, Jang, Min Su
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Volume:
260
Language:
english
Journal:
Ferroelectrics
DOI:
10.1080/00150190108015999
Date:
January, 2001
File:
PDF, 397 KB
english, 2001
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