[IEEE 2014 International Conference on Planarization/CMP Technology (ICPT) - Kobe, Japan (2014.11.19-2014.11.21)] Proceedings of International Conference on Planarization/CMP Technology 2014 - Development of innovative “dilatancy pad” realizing super high efficiency and high-grade polishing of SiC wide band Gap semiconductor substrates
Doi, Toshiro K., Seshimo, Kiyoshi, Takagi, Masataka, Ohtsubo, Masanori, Yamazaki, Tsutomu, Nishizawa, Hideaki, Aida, Hideo, Murakami, SachiYear:
2014
Language:
english
DOI:
10.1109/icpt.2014.7017272
File:
PDF, 1.45 MB
english, 2014