Uniform Luminescence at Breakdown in 4H-SiC...

IEEE Journal of the Electron Devices Society 2015 / 7 Vol. 3; Iss. 4

Uniform Luminescence at Breakdown in 4H-SiC 4°-Off (0001) p–n Diodes Terminated With an Asymmetrically Spaced Floating-Field Ring

Mochizuki, Kazuhiro, Kameshiro, Norifumi, Matsushima, Hiroyuki, Okino, Hiroyuki, Yamada, Renichi
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Volume:
3
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2015.2428993
Date:
July, 2015
File:
PDF, 967 KB
english, 2015
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