Ferroelectric Si-Doped HfO2 Device Properties on Highly...

IEEE Electron Device Letters 2015 / 8 Vol. 36; Iss. 8

Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

Lomenzo, Patrick D., Takmeel, Qanit, Fancher, Chris M., Chuanzhen Zhou,, Rudawski, Nicholas G., Moghaddam, Saeed, Jones, Jacob L., Nishida, Toshikazu
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2015.2445352
Date:
August, 2015
File:
PDF, 1.31 MB
english, 2015
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