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[IEEE 2002 Siberian Russian Workshop on Electron Devices and Materials Proceedings - Altai, China (2002.7.1-2002.7.5)] Proceedings. 3rd Annual Siberian Russian Workshop on Electron Devices and Materials - Capapitance-voltage characteristics of Al/SiO/sub 2//Si structures with embedded Si nanocrystals
Maluytina-Bronskaya, V.V.Year:
2002
Language:
english
DOI:
10.1109/sredm.2002.1024310
File:
PDF, 170 KB
english, 2002