[IEEE 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) - Chengdu, China (2014.6.18-2014.6.20)] 2014 IEEE International Conference on Electron Devices and Solid-State Circuits - A physical model of ovonic threshold switching effect for phase change memory based on the trap-to-band transition mechanism
Dongyun Shen,, Yiqun Wei,, Bin Deng,, Yuefeng Gong,, Yan Liu,, Xinnan Lin,, Xiaole Cui,, ZhiTang Song,Year:
2014
Language:
english
DOI:
10.1109/edssc.2014.7061203
File:
PDF, 541 KB
english, 2014