[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Uniform spike anneals of ultra low energy boron implants using xR LEAP and RTP Centura XE/sub plus/: ramp rate effects up to 150°C/sec

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