![](/img/cover-not-exists.png)
[IEEE 1998 International Conference on Ion Implantation Technology. Proceedings. Ion Implantation Technology - 98 - Kyoto, Japan (22-26 June 1998)] 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) - Uniform spike anneals of ultra low energy boron implants using xR LEAP and RTP Centura XE/sub plus/: ramp rate effects up to 150°C/sec
Foad, M.A., de Cock, G., Jennings, D., Wang, T.-S., Cullis, T.Volume:
2
Year:
1998
Language:
english
DOI:
10.1109/iit.1998.813771
File:
PDF, 497 KB
english, 1998