Orientational Relationships and Atomic Arrangements of GaN...

Journal of Nanoscience and Nanotechnology 2010 / 05 Vol. 10; Iss. 5

Orientational Relationships and Atomic Arrangements of GaN Nanorods Grown on Al2O3 (0001) Substrates by Using Hydride Vapor Phase Epitaxy

Lee, K. H., Lee, J. Y., Kwon, Y. H., Ryu, S. Y., Kang, T. W., Yoo, C. H., Kim, T. W.
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Volume:
10
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2010.2327
Date:
May, 2010
File:
PDF, 3.10 MB
english, 2010
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