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High gamma value 3D stackable HK/MG stacked tri-gate nanowire poly-Si FETs with embedded source/drain and back gate using low thermal budget green nanosecond laser crystallization technology
Yang, Chih-Chao, Huang, Wen-Hsien, Hsieh, Tung-Ying, Wu, Tsung-Ta, Wang, Hsing-Hsiang, Shen, Chang-Hong, Yeh, Wen-Kuan, Shiu, Jung-Hau, Chen, Yu-hsiu, Wu, Meng-Chyi, Shieh, Jia-MinYear:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2537381
File:
PDF, 643 KB
english, 2016