Dislocation filtering and polarity in the selective area growth of GaN nanowires by continuous-flow metal organic vapor phase epitaxy
Coulon, Pierre-Marie, Alloing, Blandine, Brändli, Virginie, Vennéguès, Philippe, Leroux, Mathieu, Zúñiga-Pérez, JesúsVolume:
9
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.9.015502
Date:
January, 2016
File:
PDF, 1.49 MB
english, 2016