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Effect of substrate polishing on the growth of graphene on 3C–SiC(111)/Si(111) by high temperature annealing
Gupta, B, Di Bernardo, I, Mondelli, P, Della Pia, A, Betti, M G, Iacopi, F, Mariani, C, Motta, NVolume:
27
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/27/18/185601
Date:
May, 2016
File:
PDF, 2.43 MB
english, 2016