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70-nm-gated InAlN/GaN HEMTs grown on SiC substrate with f T / f max > 160 GHz
Han, Tingting, Dun, Shaobo, Lü, Yuanjie, Gu, Guodong, Song, Xubo, Wang, Yuangang, Xu, Peng, Feng, ZhihongVolume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/2/024007
Date:
February, 2016
File:
PDF, 882 KB
english, 2016