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On the Nature of the Memory Mechanism of Gated-Thyristor Dynamic-RAM Cells
Badwan, Ahmad Z., Li, Qiliang, Ioannou, Dimitris E.Volume:
3
Language:
english
Journal:
IEEE Journal of the Electron Devices Society
DOI:
10.1109/jeds.2015.2480377
Date:
November, 2015
File:
PDF, 747 KB
english, 2015