[IEEE 2015 International Semiconductor Conference (CAS) - Sinaia, Romania (2015.10.12-2015.10.14)] 2015 International Semiconductor Conference (CAS) - Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters
Efthymiou, Loizos, Longobardi, Giorgia, Camuso, Gianluca, Hsieh, Alice Pei-Shan, Udrea, FlorinYear:
2015
Language:
english
DOI:
10.1109/smicnd.2015.7355211
File:
PDF, 795 KB
english, 2015