Low-distortion MOSFET with optimized donor concentration...

Japanese Journal of Applied Physics 2016 / 04 Vol. 55; Iss. 4

Low-distortion MOSFET with optimized donor concentration profile at channel–drain junction designed by harmonic balance device simulation

Sato-Iwanaga, Junko, Yu, Zhiping, Dutton, Robert W., Tsuchiya, Hideaki
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.044103
Date:
April, 2016
File:
PDF, 1.81 MB
english, 2016
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