Comprehensive Analysis of Gate-Induced Drain Leakage in...

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Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-mode vs. Junctionless-mode

Hur, Jae, Lee, Byung-Hyun, Kang, Min-Ho, Ahn, Dae-Chul, Bang, Tewook, Jeon, Seung-Bae, Choi, Yang-Kyu
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2540645
File:
PDF, 545 KB
english, 2016
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