Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-mode vs. Junctionless-mode
Hur, Jae, Lee, Byung-Hyun, Kang, Min-Ho, Ahn, Dae-Chul, Bang, Tewook, Jeon, Seung-Bae, Choi, Yang-KyuYear:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2016.2540645
File:
PDF, 545 KB
english, 2016