Comparison Between the Electrical Properties of ZnO Nanowires Based Field Effect Transistors Fabricated by Back- and Top-Gate Approaches
Park, Y. K., Umar, Ahmad, Kim, S. H., Kim, J.-H., Lee, E. W., Vaseem, M., Hahn, Y. B.Volume:
8
Language:
english
Journal:
Journal of Nanoscience and Nanotechnology
DOI:
10.1166/jnn.2008.478
Date:
November, 2008
File:
PDF, 2.44 MB
english, 2008