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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Electrical characteristic of InGaAs multiple-gate MOSFET devices
Huang, Cheng-Hao, Li, YimingYear:
2015
Language:
english
DOI:
10.1109/sispad.2015.7292333
File:
PDF, 1016 KB
english, 2015