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Demonstration of a Reliable High Speed Phase-Change Memory Using Ge-Doped SbTe
Lee, Suyoun, Jeong, Jeung-hyun, Wu, Zhe, Park, Young-Wook, Kim, Won Mok, Cheong, Byung-kiVolume:
156
Year:
2009
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3133252
File:
PDF, 277 KB
english, 2009