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[IEEE 2014 20th International Conference on Ion Implantation Technology (IIT) - Portland, OR (2014.6.26-2014.7.4)] 2014 20th International Conference on Ion Implantation Technology (IIT) - Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios
Shayesteh, M., O'Connell, D., Gity, F., Murphy-Armando, F., Yu, R., Huet, K., Toque-Tresonne, I., Cristiano, F., Boninelli, S., Henrichsen, H. H., Petersen, D. H., Nielsen, P. F., Duffy, R.Year:
2014
Language:
english
DOI:
10.1109/iit.2014.6939953
File:
PDF, 940 KB
english, 2014