The nature of the compositional dependence of p–n junction...

Semiconductor Science and Technology 2006 / 02 Vol. 21; Iss. 2

The nature of the compositional dependence of p–n junction depth in ion-milled p-HgCdTe

Bogoboyashchyy, V V, Izhnin, I I, Mynbaev, K D
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Volume:
21
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/21/2/003
Date:
February, 2006
File:
PDF, 243 KB
english, 2006
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