On the formation of the L-centre in silicon during heat...

Physica Scripta 2006 / 09 Vol. T126

On the formation of the L-centre in silicon during heat treatment in the temperature range 205–285°C

Mikelsen, M, Monakhov, E V, Avset, B S, Svensson, B G
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Volume:
T126
Language:
english
Journal:
Physica Scripta
DOI:
10.1088/0031-8949/2006/t126/019
Date:
September, 2006
File:
PDF, 302 KB
english, 2006
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