A Comprehensive Compact Model for GaN HEMTs, Including...

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IEEE Transactions on Electron Devices 2016

A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects

Syamal, Binit, Zhou, Xing, Chiah, Siau Ben, Jesudas, Anand M., Arulkumaran, Subramaniam, Ng, Geok Ing
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2016.2533165
File:
PDF, 2.96 MB
english, 2016
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