![](/img/cover-not-exists.png)
Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)
Tsai, Jung-Hui, Guo, Der-Feng, Kang, Yu-Chi, Weng, Tzu-YenVolume:
T129
Language:
english
Journal:
Physica Scripta
DOI:
10.1088/0031-8949/2007/t129/065
Date:
December, 2007
File:
PDF, 415 KB
english, 2007