Properties of InGaAsN heterostructures emitting at 1.3–1.55...

Semiconductor Science and Technology 2005 / 09 Vol. 20; Iss. 9

Properties of InGaAsN heterostructures emitting at 1.3–1.55 µm

Kryzhanovskaya, N V, Egorov, A Yu, Mamutin, V V, Polyakov, N K, Tsatsulnìkov, A F, Musikhin, Yu G, Kovsh, A R, Ledentsov, N N, Ustinov, V M, Bimberg, D
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Volume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/9/013
Date:
September, 2005
File:
PDF, 233 KB
english, 2005
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