Near infrared electroluminescence from n-InN/p-NiO/GaN...

Optics Communications 2016 / 07 Vol. 371

Near infrared electroluminescence from n-InN/p-NiO/GaN light-emitting diode fabricated by PAMBE

Zhao, Yang, Wang, Hui, Zhuang, Shiwei, Wu, Guoguang, Leng, Jiyan, Li, Wancheng, Gao, Fubin, Zhang, Baolin, Du, Guotong
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Volume:
371
Language:
english
Journal:
Optics Communications
DOI:
10.1016/j.optcom.2016.03.045
Date:
July, 2016
File:
PDF, 886 KB
english, 2016
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