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Temperature dependence of the electrical properties of MOS devices constructed by sol gel deposited BaTiO 3 films on p-Si
Konofaos, N, Wang, Z, Voilas, Th K, Georga, S N, Krontiras, C A, Pisanias, M N, Sotiropoulos, J, Evangelou, E KVolume:
10
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/10/1/013
Date:
January, 2005
File:
PDF, 107 KB
english, 2005