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Electrical characterization of MOS structures with self-organized three-layer gate dielectric containing Si nanocrystals
Nedev, N, Nesheva, D, Curiel, M, Manolov, E, Petrov, I, Valdez, B, Bineva, IVolume:
253
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/253/1/012034
Date:
November, 2010
File:
PDF, 798 KB
english, 2010