[IEEE 2008 17th IEEE International Symposium on the Applications of Ferroelectrics (ISAF) - Santa Re, NM, USA (2008.02.23-2008.02.28)] 2008 17th IEEE International Symposium on the Applications of Ferroelectrics - A methodology to characterize device-level endurance in 1T1C (1-transistor and 1-capacitor) FRAM
Ahn, W.S., Jung, D.J., Hong, Y.K., Kim, H.H., Kang, Y.M., Kang, S.K., Kim, H.S., Kim, J-.H., Jung, W.W., Jung, J.Y., Ko, H.K., Choi, D.Y., Kim, S.Y., Lee, E.S., Kang, J.Y., Wei, C., Lee, S.Y., A, K.H.Year:
2008
Language:
english
DOI:
10.1109/ISAF.2008.4693962
File:
PDF, 7.39 MB
english, 2008