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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)

Wang, Z.-Q., Ambrogio, S., Balatti, S., Sills, S., Calderoni, A., Ramaswamy, N., Ielmini, D.
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Year:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409649
File:
PDF, 1.03 MB
english, 2015
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