[IEEE 2016 IEEE International Solid-State Circuits Conference (ISSCC) - San Francisco, CA, USA (2016.1.31-2016.2.4)] 2016 IEEE International Solid-State Circuits Conference (ISSCC) - 18.3 A 1.2V 64Gb 8-channel 256GB/s HBM DRAM with peripheral-base-die architecture and small-swing technique on heavy load interface

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