4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor...

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IEEE Electron Device Letters 2016

4H-SiC Step Trench Gate Power Metal-Oxide-Semiconductor Field Effect Transistor

Wang, Ying, Tian, Kai, Hao, Yue, Yu, Cheng-hao, Liu, Yan-juan
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Year:
2016
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2016.2542183
File:
PDF, 378 KB
english, 2016
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