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[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Towards “atomistic” dopant profiling using SCM measurements
Aghaei, Samira, Andrei, Petru, Hagmann, MarkYear:
2015
Language:
english
DOI:
10.1109/sispad.2015.7292345
File:
PDF, 1.20 MB
english, 2015