[IEEE 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Washington DC, USA (2015.9.9-2015.9.11)] 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - TCAD analysis of FinFET stress engineering for CMOS technology scaling
Gendron-Hansen, Amaury, Korablev, Konstantin, Chakarov, Ivan, Egley, James, Cho, Jin, Benistant, FrancisYear:
2015
Language:
english
DOI:
10.1109/sispad.2015.7292349
File:
PDF, 986 KB
english, 2015