Design Techniques for a 30-ns Access Time 1.5-V 200K-bytes...

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IEEE Transactions on Circuits and Systems II: Express Briefs 2016

Design Techniques for a 30-ns Access Time 1.5-V 200K-bytes Embedded EEPROM Memory

Xu, Yiran, Hu, Jian, Xiao, Jun, Yang, Guangjun, Kong, Weiran
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Year:
2016
Language:
english
Journal:
IEEE Transactions on Circuits and Systems II: Express Briefs
DOI:
10.1109/tcsii.2016.2548238
File:
PDF, 1.08 MB
english, 2016
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