An upgraded drift–diffusion model for evaluating the...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2016 / 03 Vol. 371

An upgraded drift–diffusion model for evaluating the carrier lifetimes in radiation-damaged semiconductor detectors

Garcia Lopez, J., Jimenez-Ramos, M.C., Rodriguez-Ramos, M., Forneris, J., Ceballos, J.
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Volume:
371
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2015.09.012
Date:
March, 2016
File:
PDF, 766 KB
english, 2016
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