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[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - High-frequency, scaled MoS2 transistors
Krasnozhon, Dana, Dutta, Subhojit, Nyffeler, Clemens, Leblebici, Yusuf, Kis, AndrasYear:
2015
Language:
english
DOI:
10.1109/iedm.2015.7409781
File:
PDF, 365 KB
english, 2015