Oxidation process dependence of strain field under the SiO...

Oxidation process dependence of strain field under the SiO 2 /Si(001) interface revealed by X-ray multiple-wave diffraction

Yashiro, W, Yoda, Y, Takahashi, K, Yamamoto, M, Hattori, T, Miki, K
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Volume:
83
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/83/1/012009
Date:
October, 2007
File:
PDF, 913 KB
english, 2007
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