Physics-based drain current modeling of gate-all-around...

Journal of Computational Electronics 2016 / 6 Vol. 15; Iss. 2

Physics-based drain current modeling of gate-all-around junctionless nanowire twin-gate transistor (JN-TGT) for digital applications

Pratap, Yogesh, Gautam, Rajni, Haldar, Subhasis, Gupta, R. S., Gupta, Mridula
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Volume:
15
Language:
english
Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-016-0798-1
Date:
June, 2016
File:
PDF, 1.58 MB
english, 2016
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