Characterization of Hot-Carrier-Induced RF-MOSFET...

IEEE Transactions on Microwave Theory and Techniques 2016 / 1 Vol. 64; Iss. 1

Characterization of Hot-Carrier-Induced RF-MOSFET Degradation at Different Bulk Biasing Conditions From $S$ -Parameters

Zarate-Rincon, Fabian, Garcia-Garcia, Daniel, Vega-Gonzalez, Victor H., Torres-Torres, Reydezel, Murphy-Arteaga, Roberto S.
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Volume:
64
Language:
english
Journal:
IEEE Transactions on Microwave Theory and Techniques
DOI:
10.1109/tmtt.2015.2504090
Date:
January, 2016
File:
PDF, 2.43 MB
english, 2016
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