TEM analysis of Si-passivated Ge-on-Si MOSFET structures...

Journal of Physics Conference Series 2010 / 07 Vol. 241

TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Norris, D, Ross, I M, Cullis, A G, Walther, T, Myronov, M, Dobbie, A, Whall, T, Parker, E H C, Leadley, D R, Jaeger, B De, Lee, W, Meuris, M
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Volume:
241
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/241/1/012044
Date:
July, 2010
File:
PDF, 869 KB
english, 2010
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