The electronic structure peculiarities of a strained...

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Applied Surface Science 2016 / 4

The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: experimental and theoretical data

Terekhov, V.A., Nesterov, D.N., Domashevskaya, E.P., Geraskina, E.V., Manyakin, M.D., Kurganskii, S.I., Kamayev, G.N., Antonenko, A.K., Turishchev, S.Yu.
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Language:
english
Journal:
Applied Surface Science
DOI:
10.1016/j.apsusc.2016.04.033
Date:
April, 2016
File:
PDF, 1.37 MB
english, 2016
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