300-V class power n-channel LDMOS transistor implemented in...

  • Main
  • 2015 / 11
  • 300-V class power n-channel LDMOS transistor implemented in...
Microelectronics Reliability 2015 / 11

300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology

Zhang, Shuai, Tuan, Hsiao-Chin, Wu, Xiao-Jing, Shi, Lei, Wu, Jian
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2015.11.004
Date:
November, 2015
File:
PDF, 1.48 MB
english, 2015
Conversion to is in progress
Conversion to is failed