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Evolution of the interface structure of bonded Si wafers after high temperature annealing
Zakharov, N D, Pippel, E, Werner, P, Gösele, U, Vdovin, V, Milvidskii, M, Ries, M, Seacrist, M, Falster, RVolume:
209
Language:
english
Journal:
Journal of Physics: Conference Series
DOI:
10.1088/1742-6596/209/1/012058
Date:
February, 2010
File:
PDF, 15.22 MB
english, 2010